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A Possible Explanation of the Relativity Doublets and by Bichowsky F.R., Urey H.C.

By Bichowsky F.R., Urey H.C.

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28]. 53/XB per 30 1. Magnetic Metal Films on Semiconductor Substrates 24 1 — I — I — I — I — I — I — I — I — I — I — I — I — I — I — r T I I I I I r a) 4MLCo/GaAs(001) <100> 22 20 16 o 14 12 10 26 24 --3 22 i 20 « 18 s J 16 O b) 5MLCo/ZnSe(001) <100> J 12 -75 I L__l I -50 I I \ I I -25 I I _L _L 0 25 50 75 Polar angle (deg) Fig. 27. (a) AED polar scan along a <00 1> azimuth for 4 ML of Co grown on GaAs (00 1) at 175 °C. The structure is that expected from a bcc overlayer. 34]. 7/XB at the center of a 100 A thick film.

Das: Appl. Phys. Lett. 56, 665 (1990) 2. Magnetic Coupling and Magnetoresistance In this chapter, the related subjects of magnetic coupHng and magnetoresistance in ultrathin film structures are discussed in detail. , Cr) of the correct thickness. Antiparallel ahgnment of the adjacent ferromagnetic layer magnetizations in Fe/Cr multilayers gives rise to the phenomenon of giant magnetoresistance via the so-called spin valve effect, although indirect exchange coupHng is only one of several ways in which such an antiparallel ahgnment, and hence giant magnetoresistance, can be obtained.

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